A new technique opens a possibility to replace silicon with 2D materials in semiconducting technology. A prerequisite of building ultra-large-scale high-performance semiconducting circuits is that the ...

A new technical paper titled “Ultranarrow Semiconductor WS 2 Nanoribbon Field-Effect Transistors” was published by researchers at Chalmers University of Technology. “Semiconducting transition metal ...

A new research paper titled “Control of the Schottky barrier height in monolayer WS 2 FETs using molecular doping” was published by researchers at NIST, Theiss Research, Naval Research Laboratory, and ...

Atomic-scale strain created during growth turns out to be the hidden lever controlling excitons in WS 2 layered on graphene. Study: Excitons in Epitaxially Grown WS2 on Graphene: A Nanometer-Resolved ...

As silicon based semiconducting technology is approaching the limit of its performance, new materials that may replace or partially replace silicon in technology is highly desired. Recently, the ...